Investigation of the Interfacial Region Formed During ZnO Growth on Si(100) Substrate Using Single-source CVD
✍ Scribed by Koch, M. H.; Mar, G. L.; Hartmann, A. J.; Lamb, R. N.
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 362 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
The growth process of ZnO films on Si(100) by single-sour~e chemical vapour deposition (CVD) was investigated. During the initial stages of growth (film thickness <30A), oxidation of the Si substrate was observed ihich resulted in an interfacial region consisting of ZnO and Si oxides. For film thicknesses in excess of 40 A the composition of the film approaches that of a continuous ZnO film. It is suggested that the mixed interfacial region strongly influences the adhesion of the film on the substrate by providing Zn-Mi-type bonds. The oxidation of the substrate during the initial film growth may have direct implications on the type of contact layers that can be used in ZnO thin-film devices using single-source CVD techniques.