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Growth of single crystal GaN substrate using hydride vapor phase epitaxy

✍ Scribed by Naniwae, Kouichi; Itoh, Shigetoshi; Amano, Hiroshi; Itoh, Kenji; Hiramatsu, Kazumasa; Akasaki, Isamu

Book ID
107790484
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
259 KB
Volume
99
Category
Article
ISSN
0022-0248

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Flow Modulation Growth of Thick GaN by H
Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy
✍ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 99 KB πŸ‘ 2 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.