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Growth condition dependence of GaN crystal structure on (001)GaAs by hydride vapor-phase epitaxy

✍ Scribed by Tsuchiya, Harutoshi; Sunaba, Kenji; Suemasu, Takashi; Hasegawa, Fumio

Book ID: 108342728
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 164 KB
Volume: 189-190
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00322-4

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