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The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

✍ Scribed by Xianglin Liu; Da-Cheng Lu; Lianshan Wang; Xiaohui Wang; Du Wang; Lanying Lin

Book ID: 108342787
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 121 KB
Volume: 193
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00476-x

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