𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of III–V semiconductor nanowires by molecular beam epitaxy

✍ Scribed by F. Jabeen; S. Rubini; F. Martelli


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
770 KB
Volume
40
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Microcomputer Monte Carlo simulations of
✍ N.V. Peskov 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 468 KB

A computer model for Monte Carlo simulations of molecular beam epitaxial growth of A 1°B" semiconductors is described. The model is intended for IBM compatible microcomputers such as the AT 386/387. Some peculiaritis of the algorithm, which allow to simulate the growth process on a sufficiently larg

Growth rate enhancement of InAs nanowire
✍ J. Bubesh Babu; Kanji Yoh 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 915 KB

Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a