Growth of III–V semiconductor nanowires by molecular beam epitaxy
✍ Scribed by F. Jabeen; S. Rubini; F. Martelli
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 770 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0026-2692
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A computer model for Monte Carlo simulations of molecular beam epitaxial growth of A 1°B" semiconductors is described. The model is intended for IBM compatible microcomputers such as the AT 386/387. Some peculiaritis of the algorithm, which allow to simulate the growth process on a sufficiently larg
Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a