✦ LIBER ✦

Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy

✍ Scribed by A.P. Vajpeyi; A.O. Ajagunna; G. Tsiakatouras; A. Adikimenakis; E. Iliopoulos; K. Tsagaraki; M. Androulidaki; A. Georgakilas

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 312 KB
Volume: 86
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.01.078

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of III–V semiconductor nanowires

Growth of III–V semiconductor nanowires by molecular beam epitaxy

✍ F. Jabeen; S. Rubini; F. Martelli 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 770 KB

Growth of Group III nitrides by chemical

Growth of Group III nitrides by chemical beam epitaxy

✍ J.D. Mackenzie; C.R. Abernathy; J.D. Stewart; G.T. Muhr 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 427 KB

Growth rate enhancement of InAs nanowire

Growth rate enhancement of InAs nanowire by molecular beam epitaxy

✍ J. Bubesh Babu; Kanji Yoh 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 915 KB

Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a

Initial growth of GaAs on Si(111) substr

Initial growth of GaAs on Si(111) substrates by molecular beam epitaxy

✍ Tokuo Yodo; Masao Tamura 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 477 KB

Growth studies of GaP on Si by gas-sourc

Growth studies of GaP on Si by gas-source molecular beam epitaxy

✍ W.G. Bi; X.B. Mei; C.W. Tu 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 485 KB

Selective growth of micro GaAs dots on S

Selective growth of micro GaAs dots on Si by molecular beam epitaxy

✍ Hidefumi Maeda; Satoshi Watatani; Hiroshi Nakayama; Taneo Nishino 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 540 KB