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Growth rate enhancement of InAs nanowire by molecular beam epitaxy

✍ Scribed by J. Bubesh Babu; Kanji Yoh

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 915 KB
Volume: 322
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.02.041

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✦ Synopsis

Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a better growth condition and to attain a maximum growth rate and longer diffusion length, a systematic analysis has been carried out on the growth of InAs nanowire by varying In-and As-flux. The results have shown that the growth rate and length of the nanowires can be improved to a maximum of 3.8 nm/s and 14 mm, respectively, which is found to be the maximum by the MBE technique in the available reports.

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