Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a
Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy
β Scribed by J. Bubesh Babu; Kanji Yoh
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 592 KB
- Volume
- 323
- Category
- Article
- ISSN
- 0022-0248
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β¦ Synopsis
Au-assisted growth of InAs nanowire by molecular beam epitaxy is highly governed by the surface diffusion kinetics on the surface and the sidewalls of the growing nanowire. In this paper, we discuss the effects of growth temperature, As/In flux ratio, substrate orientation on the growth of InAs nanowire by MBE technique and their influence on the length, growth rate and density of the obtained nanowires. The obtained results show that while increasing V/III ratio, the density and length of the grown nanowires increases. Also it has been found that the growth rate of the nanowires has been improved remarkably at higher V/III ratios. Moreover, the thickness of nanowire is found to decrease with increasing V/III ratio.
π SIMILAR VOLUMES
Germanium nanowires with diameters from 10 to 70 nm and lengths up to 3 mm have been grown by Vapour-Liquid-Solid Molecular Beam Epitaxy (VLS MBE) on Ge (1 1 1), Si (0 0 1) and Si (1 1 0) substrates. The growth of nanowires was induced by gold droplets. We show that substrate temperature and germani