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Importance of kinetics effects in the growth of germanium nanowires by vapour–liquid–solid Molecular Beam Epitaxy

✍ Scribed by C. Porret; T. Devillers; A. Jain; R. Dujardin; A. Barski

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
920 KB
Volume
323
Category
Article
ISSN
0022-0248

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✦ Synopsis

Germanium nanowires with diameters from 10 to 70 nm and lengths up to 3 mm have been grown by Vapour-Liquid-Solid Molecular Beam Epitaxy (VLS MBE) on Ge (1 1 1), Si (0 0 1) and Si (1 1 0) substrates. The growth of nanowires was induced by gold droplets. We show that substrate temperature and germanium deposition rate, which determine surface diffusion length, are key parameters governing nanowires nucleation and growth phenomena. We also show that nanowires growth directions are independent of the strain induced by lattice mismatch.

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Au-assisted growth of InAs nanowire by molecular beam epitaxy is highly governed by the surface diffusion kinetics on the surface and the sidewalls of the growing nanowire. In this paper, we discuss the effects of growth temperature, As/In flux ratio, substrate orientation on the growth of InAs nano