Microcomputer Monte Carlo simulations of III-V semiconductor growth during molecular beam epitaxy

✍ Scribed by N.V. Peskov

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 468 KB
• Volume: 77
• Category: Article
• ISSN: 0010-4655
• DOI: 10.1016/0010-4655(93)90037-d

✦ Synopsis

A computer model for Monte Carlo simulations of molecular beam epitaxial growth of A 1°B" semiconductors is described. The model is intended for IBM compatible microcomputers such as the AT 386/387. Some peculiaritis of the algorithm, which allow to simulate the growth process on a sufficiently large lattice fragment, are described. Some results of the simulation of the dependence of bulk vacancy concentration on flux ratio are presented.