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Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III–V semiconductors by molecular orbital calculation

✍ Scribed by Y. Okuno; H. Asahi; S. Gonda

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 520 KB
Volume: 136
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)90387-5

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