✦ LIBER ✦
The contribution of SIMS to the characterization of III–V semiconductor layers grown by molecular beam epitaxy : G. D. T. Spillar and D. A. Andrews. Vacuum36(11/12), 991 (1986)
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 135 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0026-2714
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