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Selective area growth of III–V compound semiconductors by chemical beam epitaxy

✍ Scribed by G.J. Davies; P.J. Skevington; C.L. French; J.S. Foord

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 529 KB
Volume: 120
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(92)90420-n

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