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Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy

โœ Scribed by P. Legay; F. Alexandre; M. Nunez; J. Sapriel; D. Zerguine; J.L. Benchimol


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
612 KB
Volume
148
Category
Article
ISSN
0022-0248

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