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Growth kinetics of silicon carbide CVD

✍ Scribed by Tsutomu Kaneko; Takashi Okuno; Hisami Yumoto

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
553 KB
Volume
91
Category
Article
ISSN
0022-0248

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The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi