✦ LIBER ✦

Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers

✍ Scribed by A. Rahman; M. S. Lundstrom; A. W. Ghosh

Book ID: 126664747
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 869 KB
Volume: 97
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1845586

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impact of interface traps on gate-induce

Impact of interface traps on gate-induced drain leakage current in n -type metal oxide semiconductor field effect transistor

✍ Touhami *, A.; Bouhdada, A. 📂 Article 📅 2005 🏛 Taylor and Francis Group 🌐 English ⚖ 357 KB

Phenomena of n-type metal-oxide-semicond

Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

✍ Hsu, H.W.; Lin, K.C.; Lee, C.C.; Twu, M.J.; Huang, H.S.; Chen, S.Y.; Peng, M.R.; 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 952 KB

â©100âª n-type metal-oxide-semiconduct

â©100âª n-type metal-oxide-semiconductor field-effect transistor-embedded microcantilever sensor for observing the kinetics of chemical molecules interaction

✍ Wang, Jian; Wu, Wengang; Huang, Ying; Hao, Yilong 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 530 KB

Observations in trapping characteristics

Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique

✍ J.C. Liao; Y.K. Fang; Y.T. Hou; W.H. Wu; C.L. Hung; P.F. Hsu; K.C. Lin; K.T. Hua 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 493 KB

Generation of uniaxial tensile strain of

Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

✍ Yoshihiko Moriyama; Yuuichi Kamimuta; Keiji Ikeda; Tsutomu Tezuka 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 700 KB

Experimental Evaluation of Coulomb-Scatt

Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

✍ Nakabayashi, Yukio; Ishihara, Takamitsu; Numata, Toshinori; Uchida, Ken; Takagi, 📂 Article 📅 2010 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 196 KB