Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

✍ Scribed by Hsu, H.W.; Lin, K.C.; Lee, C.C.; Twu, M.J.; Huang, H.S.; Chen, S.Y.; Peng, M.R.; Teng, H.H.; Liu, C.H.

• Book ID: 121383415
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 952 KB
• Volume: 544
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2013.04.061