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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

✍ Scribed by Chung, J.W.; Saadat, O.I.; Tirado, J.M.; Xiang Gao, ; Guo, S.; Palacios, T.

No coin nor oath required. For personal study only.

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