AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

✍ Scribed by Yue, Yuanzheng; Hao, Yue; Zhang, Jincheng; Ni, Jinyu; Mao, Wei; Feng, Qian; Liu, Linjie

• Book ID: 121303178
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 383 KB
• Volume: 29
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2008.2000949