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Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al 2 O 3 Gate Dielectric

✍ Scribed by Mao, Wei; Zhang, Jin-Cheng; Xue, Jun-Shuai; Hao, Yao; Ma, Xiao-Hua; Wang, Chong; Liu, Hong-Xia; Xu, Sheng-Rui; Yang, Lin-An; Bi, Zhi-Wei; Liang, Xiao-Zhen; Zhang, Jin-Feng; Kuang, Xian-Wei

Book ID: 120026353
Publisher: Institute of Physics
Year: 2010
Tongue: English
Weight: 968 KB
Volume: 27
Category: Article
ISSN: 0256-307X
DOI: 10.1088/0256-307X/27/12/128501

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