✦ LIBER ✦
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
- Book ID
- 126490850
- Publisher
- IEEE
- Year
- 2014
- Tongue
- English
- Weight
- 920 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0741-3106
No coin nor oath required. For personal study only.