✦ LIBER ✦
Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology
✍ Scribed by S. Kolluri; S. Keller; S. P. Denbaars; U. K. Mishra
- Book ID
- 126498877
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 478 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0741-3106
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