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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

✍ Scribed by K. Čičo; D. Gregušová; J. Kuzmík; M. Jurkovič; A. Alexewicz; M.-A. di Forte Poisson; D. Pogany; G. Strasser; S. Delage; K. Fröhlich

Book ID: 113916067
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 562 KB
Volume: 67
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.09.002

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