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Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures

✍ Scribed by J. Suñé; I. Placencia; E. Farrés; N. Barniol; F. Martin; X. Aymerich


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
775 KB
Volume
20
Category
Article
ISSN
0026-2692

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