Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures : J. Sune, I. Placencia, E. Farres, N. A. Barniol, F. Martin and X. Aymerich. Microelectron. J.20(6), 27 (1989)

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 134 KB
• Volume: 30
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(90)90584-a