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Gate current in ultrathin MOS capacitors: a new model of tunnel current

✍ Scribed by Larcher, L.; Paccagnella, A.; Ghidini, G.

Book ID
114538563
Publisher
IEEE
Year
2001
Tongue
English
Weight
178 KB
Volume
48
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES

A review of gate tunneling current in MO
A review of gate tunneling current in MOS devices
✍ Juan C. RanuΓ‘rez; M.J. Deen; Chih-Hung Chen πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 432 KB

Gate current in metal-oxide-semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors