Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide

✍ Scribed by Majkusiak, B.; Badri, M.H.

• Book ID: 114538472
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 107 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.887019