Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

✍ Scribed by Yang, N.; Henson, W.K.; Hauser, J.R.; Wortman, J.J.

• Book ID: 114537786
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 168 KB
• Volume: 46
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.772492