A review of gate tunneling current in MOS devices

✍ Scribed by Juan C. Ranuárez; M.J. Deen; Chih-Hung Chen

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 432 KB
• Volume: 46
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2005.12.006

✦ Synopsis

Gate current in metal-oxide-semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors, including effects such as direct tunneling, polysilicon depletion, hole tunneling and valence band tunneling and gate current partitioning. The modeling approach to gate current used in several compact MOS models is presented and compared. Also, some of the effects of this gate current in the performance of digital, analog and RF circuits is discussed, and it is shown how new effects and considerations will come into play when designing circuits that use MOSFETs with ultra-thin oxides.