✦ LIBER ✦
Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY
✍ Scribed by S.N. Mohammad; G. Fiorenza; A. Acovic; J.B. Johnson; R.L. Carter
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 813 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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