A physical model for hole direct tunneling current in p+ poly-gate pMOSFETs with ultrathin gate oxides

✍ Scribed by Kuo-Nan Yang; Huan-Tsung Huang; Ming-Chin Chang; Che-Min Chu; Yuh-Shu Chen; Ming-Jer Chen; Yeou-Ming Lin; Mo-Chiun Yu; Jang, S.M.; Yu, C.H.; Liang, M.S.

• Book ID: 114538327
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 192 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.877179