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Gas phase composition in the Ga-AsCl3-H2 system for epitaxial deposition of GaAs

✍ Scribed by Heinz Hämmerling

Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
366 KB
Volume
9
Category
Article
ISSN
0022-0248

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## Abstract Durch Pyrolyse von Ga (CH~3~)~3~AsH~3~H~2~ wurden GaAs‐Epitaxieschichten auf (111)‐, (110)‐ und (100)‐Ge‐Substraten abgeschieden. In dieser Arbeit wird der Einfluß der Wachstumsbedingungen und des Gitterunterschiedes von GaAs und Ge auf die Qualität der GaAs‐Epitaxieschichten beschrie

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## Abstract For reactions taking place between the species Ga, As~2~, As~4~, AsH~3~, and H~2~, the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate