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Epitaxial Deposition of GaAs in the Ga(CH3)3AsH3H2 System (III) Heteroepitaxy on Isolating Substrates

✍ Scribed by Dr. W.-H. Petzke; Dr. V. Gottschalch; Prof. Dr. sc. E. Butter

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
416 KB
Volume
9
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

Epitaxial growth of GaAs has been achieved on CaF~2~, α‐Al~2~O~3~ and spinel substrates. X‐ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in terms of supersaturation and its influence on nucleation and layer growth.

πŸ“œ SIMILAR VOLUMES

Epitaxial Deposition of GaAs in the Ga (
Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2-System (IV) Thermodynamic and Kinetic Considerations
✍ Dr. W.-H. Petzke; Dr. V. Gottschalch; Prof. Dr. sc. E. Butter πŸ“‚ Article πŸ“… 1974 πŸ› John Wiley and Sons 🌐 English βš– 404 KB

## Abstract For reactions taking place between the species Ga, As~2~, As~4~, AsH~3~, and H~2~, the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate