## Abstract Epitaxial growth of GaAs has been achieved on CaF~2~, α‐Al~2~O~3~ and spinel substrates. X‐ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in
Deposition of InP on GaAs Substrates in the InP/PCl3/H2 System
✍ Scribed by Dr. G. Wagner; Doz. Dr. sc. G. Kühn; Doz. Dr. sc. H. Neumann; E. Nowak
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 441 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
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📜 SIMILAR VOLUMES
## Abstract For reactions taking place between the species Ga, As~2~, As~4~, AsH~3~, and H~2~, the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate
Methyl 2-acetyl-3-{[2-(dimethylamino)-1-(methoxycarbonyl)ethenyl]amino}prop-2-enoate (4) and phenylmethyl 2-acetyl-3-{[2-(dimethyIamino)-l -(methoxycarbonyl)ethenyl]amino}prop-2-enoate (5) were prepared in three steps from the corresponding acetoacetic esters, and used as reagents for the preparatio