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Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2-System (IV) Thermodynamic and Kinetic Considerations

✍ Scribed by Dr. W.-H. Petzke; Dr. V. Gottschalch; Prof. Dr. sc. E. Butter

Publisher: John Wiley and Sons
Year: 1974
Tongue: English
Weight: 404 KB
Volume: 9
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.19740090706

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✦ Synopsis

Abstract

For reactions taking place between the species Ga, As~2~, As~4~, AsH~3~, and H~2~, the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate the importance of the As:Ga proportion that has to apply for perfect layer growth. The mechanism of deposition is in correspondence with a Langmuir‐Rideal Model. For high substrate temperatures a homogeneous reaction in the vapour phase can‐not be excluded.

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✍ Dr. W.-H. Petzke; Dr. V. Gottschalch; Prof. Dr. sc. E. Butter 📂 Article 📅 1974 🏛 John Wiley and Sons 🌐 English ⚖ 416 KB 👁 2 views

## Abstract Epitaxial growth of GaAs has been achieved on CaF~2~, α‐Al~2~O~3~ and spinel substrates. X‐ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in