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A multi-wafer growth technique for GaAs vapor phase epitaxy using the AsCl3-Ga-N2 system with a horizontal reactor

✍ Scribed by J. Komeno; A. Miura; S. Ohkawa


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
382 KB
Volume
45
Category
Article
ISSN
0022-0248

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