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Epitaxial Deposition of GaAs in the Ga(CH3)3AsH3H2 system (II). Investigations on the Hetero-Epitaxy of GaAs on Ge

✍ Scribed by Dr. V. Gottschalch; Dr. W.-H. Petzke; Prof. Dr. sc. E. Butter

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
554 KB
Volume
9
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

Durch Pyrolyse von Ga (CH~3~)~3~AsH~3~H~2~ wurden GaAs‐Epitaxieschichten auf (111)‐, (110)‐ und (100)‐Ge‐Substraten abgeschieden. In dieser Arbeit wird der Einfluß der Wachstumsbedingungen und des Gitterunterschiedes von GaAs und Ge auf die Qualität der GaAs‐Epitaxieschichten beschrieben und diskutiert. Die Epitaxieschichten wurden durch chemisches ätzen, Röntgenuntersuchungen und durch Betrachten der Oberflächenmorphologie charakterisiert.

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