## Abstract In order to improve GaN‐based light‐emitting diode (LED) performance, a sapphire‐etched vertical‐electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The light‐output power, heat dissipation, and reverse electrostatic discharge (ESD) characteri
✦ LIBER ✦
GaN-based light-emitting diodes prepared on vicinal sapphire substrates
✍ Scribed by Lin, J.C.; Su, Y.K.; Chang, S.J.; Lan, W.H.; Huang, K.C.; Chen, W.R.; Cheng, Y.C.; Lin, W.J.
- Book ID
- 115463216
- Publisher
- The Institution of Engineering and Technology
- Year
- 2007
- Tongue
- English
- Weight
- 426 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1751-8768
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