✦ LIBER ✦

Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates

✍ Scribed by Liu, Yi-Jung; Tsai, Tsung-Yuan; Yen, Chih-Hung; Chen, Li-Yang; Tsai, Tsung-Han; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Hsiang; Liu, Wen-Chau

Book ID: 115412752
Publisher: Optical Society of America
Year: 2010
Tongue: English
Weight: 634 KB
Volume: 18
Category: Article
ISSN: 1094-4087
DOI: 10.1364/OE.18.002729

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaN-based light-emitting diodes prepared

GaN-based light-emitting diodes prepared on vicinal sapphire substrates

✍ Lin, J.C.; Su, Y.K.; Chang, S.J.; Lan, W.H.; Huang, K.C.; Chen, W.R.; Cheng, Y.C 📂 Article 📅 2007 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 426 KB

Vertical chip of GaN-based light-emittin

Vertical chip of GaN-based light-emitting diode formed on sapphire substrate

✍ Kim, Seong-Jin ;Choi, Yong-Seok ;Han, Young-Heon ;Kim, Chang-Yeon ;Yu, Soon-Jae 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 361 KB

## Abstract In order to improve GaN‐based light‐emitting diode (LED) performance, a sapphire‐etched vertical‐electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The light‐output power, heat dissipation, and reverse electrostatic discharge (ESD) characteri

Investigation of the Electrostatic Disch

Investigation of the Electrostatic Discharge Performance of GaN-Based Light-Emitting Diodes With Naturally Textured p-GaN Contact Layers Grown on Miscut Sapphire Substrates

✍ Yi-Jung Liu; Der-Feng Guo; Li-Yang Chen; Tsung-Han Tsai; Chien-Chang Huang; Tai- 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 798 KB

Investigation of GaN-based light emittin

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

✍ H.W. Huang; C.H. Lin; J.K. Huang; K.Y. Lee; C.F. Lin; C.C. Yu; J.Y. Tsai; R. Hsu 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 745 KB

Electrical characteristics of InGaN/GaN

Electrical characteristics of InGaN/GaN light-emitting diodes grown on GaN and sapphire substrates

✍ Cao, X. A.; Teetsov, J. M.; DEvelyn, M. P.; Merfeld, D. W.; Yan, C. H. 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 411 KB

InGaN/GaN light-emitting diodes with a r

InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

✍ Y. P. Hsu; S. J. Chang; Y. K. Su; C. S. Chang; S. C. Shei; Y. C. Lin; C. H. Kuo; 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 141 KB