## Abstract We report the structural, electrical, and optical characteristics of green light emitting diodes (LEDs) using InGaN:Mg as a p‐type layer grown on a (0001) bulk GaN substrate in comparison to the LEDs grown on a sapphire substrate. The density of nano‐pits of LEDs on the bulk substrates
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
✍ Scribed by Y. P. Hsu; S. J. Chang; Y. K. Su; C. S. Chang; S. C. Shei; Y. C. Lin; C. H. Kuo; L. W. Wu; S. C. Chen
- Book ID
- 107453031
- Publisher
- Springer US
- Year
- 2003
- Tongue
- English
- Weight
- 141 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0361-5235
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