## Abstract InGaN/GaN blue lightβemitting diodes (LEDs) on sapphire substrates with a SiO~2~/TiO~2~ Bragg reflector were fabricated. The deposited SiO~2~/TiO~2~ Bragg reflectors exhibit a high reflectivity of up to nearly 96.9% at about 460 nm. When the InGaN/GaN LEDs with a SiO~2~/TiO~2~ Bragg ref
β¦ LIBER β¦
Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector
β Scribed by Y. S. Zhao; D. L. Hibbard; H. P. Lee; K. Ma; W. So; H. Liu
- Book ID
- 107453001
- Publisher
- Springer US
- Year
- 2003
- Tongue
- English
- Weight
- 82 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0361-5235
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