Improved performance of InGaN/GaN blue light-emitting diodes with a SiO2/TiO2 Bragg reflector
✍ Scribed by Chen, Lung-Chien ;Feng, Hui-Ching
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 140 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
InGaN/GaN blue light‐emitting diodes (LEDs) on sapphire substrates with a SiO~2~/TiO~2~ Bragg reflector were fabricated. The deposited SiO~2~/TiO~2~ Bragg reflectors exhibit a high reflectivity of up to nearly 96.9% at about 460 nm. When the InGaN/GaN LEDs with a SiO~2~/TiO~2~ Bragg reflectors were operated at a forward current of 20 mA at room temperature, the peak wavelength, the light output power, and the external quantum efficiency were measured to be 470 nm, 5.91 mW, and 11.21%, respectively. The light output power was as high as 15.33 mW at the forward current of 100 mA. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)