## Abstract We report the structural, electrical, and optical characteristics of green light emitting diodes (LEDs) using InGaN:Mg as a pโtype layer grown on a (0001) bulk GaN substrate in comparison to the LEDs grown on a sapphire substrate. The density of nanoโpits of LEDs on the bulk substrates
Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates
โ Scribed by Yong Gon Seo; Kwang Hyeon Baik; Keun-Man Song; Seokwoo Lee; Hyungdo Yoon; Jae-Hyoun Park; Kyunghwan Oh; Sung-Min Hwang
- Book ID
- 108079358
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 810 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1567-1739
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