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Electrical characteristics of InGaN/GaN light-emitting diodes grown on GaN and sapphire substrates

✍ Scribed by Cao, X. A.; Teetsov, J. M.; DEvelyn, M. P.; Merfeld, D. W.; Yan, C. H.


Book ID
115511382
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
411 KB
Volume
85
Category
Article
ISSN
0003-6951

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## Abstract We report the structural, electrical, and optical characteristics of green light emitting diodes (LEDs) using InGaN:Mg as a p‐type layer grown on a (0001) bulk GaN substrate in comparison to the LEDs grown on a sapphire substrate. The density of nano‐pits of LEDs on the bulk substrates