𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate

✍ Scribed by Xiao-Jiang, Pei; Li-Wei, Guo; Xiao-Hui, Wang; Yang, Wang; Hai-Qiang, Jia; Hong, Chen; Jun-Ming, Zhou


Book ID
115467998
Publisher
Institute of Physics
Year
2009
Tongue
English
Weight
411 KB
Volume
26
Category
Article
ISSN
0256-307X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Green light-emitting diodes with p-InGaN
✍ Liu, J. P. ;Limb, Jae ;Lochner, Zachary ;Yoo, Dongwon ;Ryou, Jae-Hyun ;Dupuis, R πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 284 KB

## Abstract We report the structural, electrical, and optical characteristics of green light emitting diodes (LEDs) using InGaN:Mg as a p‐type layer grown on a (0001) bulk GaN substrate in comparison to the LEDs grown on a sapphire substrate. The density of nano‐pits of LEDs on the bulk substrates