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Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

✍ Scribed by Hung-Cheng Lin; Ruo-Syuan Lin; Jen-Inn Chyi; Chia-Ming Lee


Book ID
115468142
Publisher
IEEE
Year
2008
Tongue
English
Weight
704 KB
Volume
20
Category
Article
ISSN
1041-1135

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Green light-emitting diodes with p-InGaN
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## Abstract We report the structural, electrical, and optical characteristics of green light emitting diodes (LEDs) using InGaN:Mg as a p‐type layer grown on a (0001) bulk GaN substrate in comparison to the LEDs grown on a sapphire substrate. The density of nano‐pits of LEDs on the bulk substrates