## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con
Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates
✍ Scribed by W.K. Wang; D.S. Wuu; S.H. Lin; S.Y. Huang; K.S. Wen; R.H. Horng
- Book ID
- 108191414
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 301 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0022-3697
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