Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates
β Scribed by Hisashi Yamada; Kenji Iso; Makoto Saito; Hirohiko Hirasawa; Natalie Fellows; Hisashi Masui; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura
- Book ID
- 112182652
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 205 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6254
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## Abstract We report the structural, electrical, and optical characteristics of green light emitting diodes (LEDs) using InGaN:Mg as a pβtype layer grown on a (0001) bulk GaN substrate in comparison to the LEDs grown on a sapphire substrate. The density of nanoβpits of LEDs on the bulk substrates
## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__βplane GaN and __c__βplane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__β and __c__βpla