## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__βplane GaN and __c__βplane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__β and __c__βpla
β¦ LIBER β¦
Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates
β Scribed by Lai, K. Y.; Paskova, T.; Wheeler, V. D.; Grenko, J. A.; Johnson, M. A. L.; Barlage, D. W.; Udwary, K.; Preble, E. A.; Evans, K. R.
- Book ID
- 120933808
- Publisher
- American Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 572 KB
- Volume
- 106
- Category
- Article
- ISSN
- 0021-8979
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## Abstract We report on the optical properties of a series of nonβpolar __a__βplane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking