𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

✍ Scribed by Kwang-Choong Kim; Mathew C. Schmidt; Hitoshi Sato; Feng Wu; Natalie Fellows; Makoto Saito; Kenji Fujito; James S. Speck; Shuji Nakamura; Steven P. DenBaars

Book ID
112182575
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
195 KB
Volume
1
Category
Article
ISSN
1862-6254

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Indium incorporation in InGaN/GaN quantu
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
✍ Lai, K. Y. ;Paskova, T. ;Wheeler, V. D. ;Chung, T. Y. ;Grenko, J. A. ;Johnson, M πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 372 KB

## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__‐plane GaN and __c__‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__‐ and __c__‐pla

Crystalline dependence of optical and in
Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire
✍ Sung-Nam Lee; Jihoon Kim; Hyunsoo Kim πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 647 KB

We investigated the optical and the crystal qualities of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane (1 1 -2 0) GaN/r-sapphire by introducing the novel 2-step growth method without low temperature GaN or AlN buffer layer. In spite of achievement of macroscopic specular surface structure